Name: John Ayers
Title: Associate Professor
Department: Electrical & Computer Engineering
Personal/Lab Website: http://www.engr.uconn.edu/~jayers/
Program/Department Website: http://www.ee.uconn.edu/faculty-staff-students/faculty/fac_ayers
Office Telephone: (860) 486-2207
Keywords | Categories: Electrical and Computer Engineering, heteroepitaxy of semiconductors, II-VI and III-V semiconductors, metamorphic buffer layers for semiconductor devices, SiGe, strain dislocations, strain relaxation, x-ray characterization
Dr. Ayers’ research focuses on the growth, modeling, and characterization of mismatched heteroepitaxial semiconductors for device applications. His research group has developed the standard approaches for modeling strain relaxation and dislocation densities in semiconductor heterostructures. These approaches address both the equilibrium configuration and the kinetically-limited relaxation and non-equilibrium defect densities. Other novel work by the research group has extended the x-ray characterization of heterostructures to the metamorphic case, in which the mosaic broadening of threading dislocations must be included.