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Faculty Profile

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Name: A. F. M. Anwar
Title: Professor
Department: Electrical & Computer Engineering
E-Mail: anwara@engr.uconn.edu
Personal/Lab Website:
Program/Department Website: http://www.ee.uconn.edu/faculty-staff-students/faculty/fac_anwar/
Office Telephone: (860) 486-3979

Keywords | Categories: Carrier localization in one-dimensional structures, Electrical and Computer Engineering, high power quantum cascade lasers, impurity diagnostics in quantum well structures and Silicon nanowires, metamorphic HEMTs, noise in semiconductor devices, power performance of GaN-based HFETs and circuits, Sb-based type-II infrared detectors, transport in semiconductor devices

Professional Summary

Dr. Mehdi Anwar currently serves as a Full Professor in the Electrical and Computer Engineering department. He is the Director of the NSF funded Industry University Cooperative Research Center. He has also served as the Associate Dean for Research & Graduate Education of the School of Engineering, University of Connecticut from June 2006 till May 2009. He served as the founding Director of the Department of Homeland Security Center of Excellence from June 2007 till May 2009. Moreover, he was the interim Director of the Connecticut Global Fuel Cell Center serving from June 2007 till January 2009. He served as the interim Department Head of ECE from June 1999 – August 2001.

Dr. Anwar’s interests include localization of one-dimensional structures, transport in semiconductor devices, impurity diagnostics in quantum well structures, Sb-based type-II infrared detectors, noise in semiconductor devices, power performance of GaN-based HFETs and circuits. He has developed measurement techniques to carry out trap characterization in InP and GaN-based HEMTs and load pull setups operating at W-band while the modeling interests span a breadth of subject areas and include transport in DNA, silicon nano-wires, quantum well infrared photodetectors, stochastic quantum mechanics and noise in quantum structures. Dr. Anwar’s team pioneered noise measurement in metamorphic antimony-based-compound-semiconductor (ABCS) HEMTs with quaternary buffer/barrier and ternary. His design launched AFRL to develop the first metamorphic HEMTs with an fT around 200FGHz and Fmin of 0.82dB at 15GHz, using a 0.15 micron gate. He also predicted the inability for the channel to be pinched-off for wide quantum well devices. He has presented over 15 plenary and invited talks at national/international conferences, offered tutorials on nanosensors at Optics East, published over 170 archival journal publications and conference proceedings, co-authored three book chapters and served as principal investigator or co-principal investigator on more than $4.4 million in research grants and contracts.

Dr. Anwar was an IPA during his sabbatical leave (July 2004 – August 2005) at the Sensors Directorate, Hanscom Air Force Base, working on advanced metamorphic HEMTs and GaN-based HFETs. He serves as an Editor of the IEEE Transactions on Electron Devices (2001 – present) and am conference chair of the international conference on Terahertz Physics, Devices and Systems: Advanced Applications in Industry and Defense of the SPIE Defense, Security and Sensing (2009, 2010). He has also chaired the 2006 and 2007 Terahertz Physics, Devices and Systems Conference as part of SPIE’s Optics East. He is a member of Clarkson University’s Engineering Advisory Council and a consultant for the Sensors Directorate at Hanscom Air Force Base.

In 2007 he was elected to the rank of SPIE Fellow in 2007 for my contribution in the area of Quantum Well Infrared Detectors.