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Research Keyword: strain relaxation

Faculty: Ayers, John
Department: Electrical & Computer Engineering
Excerpt: Dr. Ayers’ research focuses on the growth, modeling, and characterization of mismatched heteroepitaxial semiconductors for device applications. His research group has developed the standard approaches for modeling strain relaxation and dislocation densities in semiconductor heterostructures. These approaches address both the equilibrium configuration and the kinetically-limited relaxation and non-equilibrium defect densities. Other novel work by the […]
Categories | Keywords: Electrical and Computer Engineering, heteroepitaxy of semiconductors, II-VI and III-V semiconductors, metamorphic buffer layers for semiconductor devices, SiGe, strain dislocations, strain relaxation, x-ray characterization